Gaming Storage

 3D TLC NAND FLASH.  Ultra-Fast Transmission.  SATA III 6Gb/s & SATA II.  Work Temperature: 0-70 .  Available in Capacities 120GB, 240GB, 480GB, 960GB, 1920GB  MTBF (Mean Time between Failures): 2,000,000 hours.  Sequential Read, Write Speed (Up To): 560MB/s, 520 MB/s.

 PCIe Gen3A-4 Interface.  M.2 2280 Form Factor.  3D TLC NAND Flash Memory.  Available in 128GB, 256GB, 512GB, 1TB.  Sequential Read, Write Speed (Up To): 2100 MB/s, 1800 MB/s.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. Available in 250GB, 500GB, 1TB. Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s MTBF (Mean Time between Failures): 2,000,000 hours.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. Available in 250GB, 500GB, 1TB. Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s MTBF (Mean Time between Failures): 2,000,000 hours.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D NAND Flash Memory. Available in 128GB, 256GB, 512GB, 1TB. Sequential Read, Write Speed (Up To): 1800 MB/s, 1200 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D TLC NAND Flash Memory. Available in 240GB, 480GB, 960GB, 1920GB, 4TB. Sequential Read, Write Speed (Up To): 3,100 MB/s, 1,050 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

Capacity: 1TB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

Capacity: 1TB Form Factor: M.2 Compatibility: PCIe NVMe 3.0 Reading speed:3000 MB / s Recording speed:1300 MB / s

   128 GB Large Memory Capacity

Cache Memory Samsung 512MB Low Power DDR4 SDRAM Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 4.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 7000MB/s Read, 5000MB/s Write

Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 3.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 2900MB/s Read, 1300MB/s Write

Available in 512 GB, 1 TB PCIe 3 x 4 NVMe Interface M.2 2280 Form Factor 3D NAND Up to 3500MB/s Read, 2250MB/s Write

Available in 512 GB, 1 TB PCIe 3 x 4 NVMe Interface M.2 2280 Form Factor 3D NAND Up to 3500MB/s Read, 2250MB/s Write

> Custom-built for surveillance applications with Image Perfect firmware for crisp, clear, 24A-7 video workloads > Maximum 180TB/year workload rating”3A- the workload rating of desktop drives”for reliable performance in write-intensive surveillance systems > Rotational vibration (RV) sensors help maintain performance in RAID and multi-drive systems (4TB or higher) Up to 14TB of capacity to store up to 10,000 hours of HD video

The 12TB Exos 7E8 512e SATA III 3.5 Internal HDD from Seagate is designed for professional applications such as centralized surveillance, OLTP, and HPC applications. With durability rated for 24A-7 operation, this drive is also ideal for data centers that require constant uptime. Specs-wise, it has 12 TB of storage capacity, operates at 7200 rpm, and utilizes a SATA III 6 Gb/s interface. Seagate has also equipped this drive with Advanced Write Cache for improved response time and faster…

>  10x faster than an HDD U3D NAND. >  E100 is shock and vibration-resistant. >  Fast start-up, loading, and file transfers 3D TLC (Tri-Level Cell).  >  More reliable and durable than a hard drive. >  Available in 120GB, 240GB, 512GB, 1024GB capacities. >  A400 is designed to suit anyone's needs. >  Ideal for desktops and notebooks.

 PCIe Gen3A-4 Interface.  M.2 2280 Form Factor.  3D TLC NAND Flash Memory.  Available in 128GB, 256GB, 512GB, 1TB.  Sequential Read, Write Speed (Up To): 2100 MB/s, 1800 MB/s.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

 PCIe Gen3A-4 Interface.  M.2 2280 Form Factor.  3D TLC NAND Flash Memory.  SATA III 6Gb/s & SATA II 3 Gb/s.  Available in 128GB, 256GB, 512GB, 1TB.  Sequential Read, Write Speed (Up To): 550MB/s, 500 MB/s.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

Capacity: 256GB Form Factor: M.2 2280 Interface: M.2 Connections: 1 x M.2 PCIe Max Read/Write: Read: Up to 2500 MB/s, Write: Up to 2100 MB/s

Capacity: 256GB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

Capacity: 512GB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

Capacity: 500GB Form Factor: M.2 Compatibility: PCIe NVMe 3.0 Reading speed:3000 MB / s Recording speed:1300 MB / s

Cache Memory Samsung 512MB Low Power DDR4 SDRAM Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 4.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 7000MB/s Read, 5000MB/s Write

Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 3.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 2900MB/s Read, 1300MB/s Write

Available in 512GB, 1TB, 2TB PCIe 3.0 x 4 NVMe 1.3 Interface M.2 2280 Form Factor Up to 2100MB/s Read, 1700MB/s Write